Volume 7, Issue 4, August 2014, Pages 1479–1484
Md. Abdur Rafiq Akand1, Md. Rakibul Hasan2, Mohammad Khairul Basher3, and Mahbubul Hoq4
1 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
2 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
3 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
4 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Surface photovoltage (SPV) method is a contactless technique for non-destructive characterization of Si wafers and monocrystalline Si solar cells, mainly for minority carrier diffusion length determination. The minority carrier diffusion length, L is a critical factor impacting the conversion efficiency and spectral response of the monocrysyalline Si solar cell and it is also essential for evaluation of the quality and transport properties of the P-type Si wafer. In 1961, A. M. Goodman showed that, under certain assumption, by making measurements of SPV as a function of wavelength, the minority carrier diffusion length can be determined. Therefore a simply steady state SPV method has been developed to determine the minority carrier diffusion length as well as lifetime of monocrystalline Si solar cells. In Bangladesh for the first time "Bangladesh Atomic Energy Commission (BAEC)" has set up a laboratory to fabricate and diagnosis of monocrystalline Si solar cell. This paper focused on the study of surface photvoltage (SPV) and determination of minority carrier diffusion length, L and lifetime, ? of monocrystalline Si solar cell. By calculating the experimental data obtained from monocrystalline Si solar cells measurements, minority carrier diffusion length and lifetime were derived and it was 81.5?m and 2.5?sec respectively.
Author Keywords: P-type Silicon, Minority Carrier, Diffusion Length, Carrier Lifetime, Doping concentration.
Md. Abdur Rafiq Akand1, Md. Rakibul Hasan2, Mohammad Khairul Basher3, and Mahbubul Hoq4
1 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
2 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
3 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
4 Solar Cell Fabrication and Research Division, Institute of Electronics, AERE, Bangladesh Atomic Energy Commission, Ganak Bari , Savar, Dhaka, Bangladesh
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Surface photovoltage (SPV) method is a contactless technique for non-destructive characterization of Si wafers and monocrystalline Si solar cells, mainly for minority carrier diffusion length determination. The minority carrier diffusion length, L is a critical factor impacting the conversion efficiency and spectral response of the monocrysyalline Si solar cell and it is also essential for evaluation of the quality and transport properties of the P-type Si wafer. In 1961, A. M. Goodman showed that, under certain assumption, by making measurements of SPV as a function of wavelength, the minority carrier diffusion length can be determined. Therefore a simply steady state SPV method has been developed to determine the minority carrier diffusion length as well as lifetime of monocrystalline Si solar cells. In Bangladesh for the first time "Bangladesh Atomic Energy Commission (BAEC)" has set up a laboratory to fabricate and diagnosis of monocrystalline Si solar cell. This paper focused on the study of surface photvoltage (SPV) and determination of minority carrier diffusion length, L and lifetime, ? of monocrystalline Si solar cell. By calculating the experimental data obtained from monocrystalline Si solar cells measurements, minority carrier diffusion length and lifetime were derived and it was 81.5?m and 2.5?sec respectively.
Author Keywords: P-type Silicon, Minority Carrier, Diffusion Length, Carrier Lifetime, Doping concentration.
How to Cite this Article
Md. Abdur Rafiq Akand, Md. Rakibul Hasan, Mohammad Khairul Basher, and Mahbubul Hoq, “Study of Surface Photo voltage for monocrystalline silicon solar cell fabricated at BAEC solar cell lab.,” International Journal of Innovation and Applied Studies, vol. 7, no. 4, pp. 1479–1484, August 2014.
