Volume 34, Issue 4, November 2021, Pages 721–733
M. A. Taha1, A. Abderahim2, O. B. Arafat3, S. Capraro4, P. David5, and J. J. Rousseau6
1 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
2 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
3 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
4 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
5 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
6 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
Original language: English
Copyright © 2021 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
This paper presents a study on the main characteristics of an integrated transformer i.e. the low and high cut-off frequencies (FCL and FCH) and the voltage gain within the bandwidth (G0). After a description of the integrated transformer and its micro-fabrication, the measured transformer frequency response is given. An equivalent circuit is derived ant the method to determine each element is shortly described. Then, the paper focuses on the influence of geometrical dimensions and a few characteristics of materials on the low and high cut-off frequencies (FCL and FCH) and on the voltage gain (G0). An analytical expression is derived for FCL, FCH and G0. The aim of this article is to identify the main parameters that limit the bandwidth and the voltage gain.
Author Keywords: Integrated transformer, bandwidth, cut-off frequencies, gain.
M. A. Taha1, A. Abderahim2, O. B. Arafat3, S. Capraro4, P. David5, and J. J. Rousseau6
1 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
2 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
3 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
4 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
5 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
6 LabHC UMR 5516, CNRS, 42023 Saint-Etienne, JEAN MONNET University of Saint-Etienne, Saint-Etienne, France
Original language: English
Copyright © 2021 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
This paper presents a study on the main characteristics of an integrated transformer i.e. the low and high cut-off frequencies (FCL and FCH) and the voltage gain within the bandwidth (G0). After a description of the integrated transformer and its micro-fabrication, the measured transformer frequency response is given. An equivalent circuit is derived ant the method to determine each element is shortly described. Then, the paper focuses on the influence of geometrical dimensions and a few characteristics of materials on the low and high cut-off frequencies (FCL and FCH) and on the voltage gain (G0). An analytical expression is derived for FCL, FCH and G0. The aim of this article is to identify the main parameters that limit the bandwidth and the voltage gain.
Author Keywords: Integrated transformer, bandwidth, cut-off frequencies, gain.
How to Cite this Article
M. A. Taha, A. Abderahim, O. B. Arafat, S. Capraro, P. David, and J. J. Rousseau, “Study of the bandwidth of an integrated micro-transformer,” International Journal of Innovation and Applied Studies, vol. 34, no. 4, pp. 721–733, November 2021.
