Zinc Telluride (ZnTe) thin films have been successfully deposited on a glass substrate Fluorine Tin oxide (FTO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 200-900nm. Zinc Telluride (ZnTe) thin films were investigated at room temperature. Optical absorption study showed that ZnTe films were of indirect band gap type semiconductor with band gap energy of 2.2-2.4eV.
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