Volume 10, Issue 1, January 2015, Pages 132–137
Taj-eddin Elhamadi1, Mohamed Boussouis2, and Naima Amar Touhami3
1 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
2 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
3 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
Original language: English
Copyright © 2015 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Artificial neural networks (ANNs) have recently been introduced in the microwave area as a fast and flexible vehicle to microwave modeling, simulation and optimization. The models are fast and can represent EM/physics behaviors it learnt which otherwise are computationally expensive. In this paper a neural network model is developed for a Pseudomorphic High Electron Mobility Transistor PHEMT (ED02AH-6x30), a transistor of 6 gate fingers, each with a width of 30
Author Keywords: Neural networks, multi-layer perceptron, back propagation algorithm, PHEMT, Taylor series expansion.
Taj-eddin Elhamadi1, Mohamed Boussouis2, and Naima Amar Touhami3
1 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
2 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
3 Electronic and Instrumentation laboratory, Faculty of Science, Abdmalak Essaadi University, Tetouan, Morocco
Original language: English
Copyright © 2015 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Artificial neural networks (ANNs) have recently been introduced in the microwave area as a fast and flexible vehicle to microwave modeling, simulation and optimization. The models are fast and can represent EM/physics behaviors it learnt which otherwise are computationally expensive. In this paper a neural network model is developed for a Pseudomorphic High Electron Mobility Transistor PHEMT (ED02AH-6x30), a transistor of 6 gate fingers, each with a width of 30
Author Keywords: Neural networks, multi-layer perceptron, back propagation algorithm, PHEMT, Taylor series expansion.
How to Cite this Article
Taj-eddin Elhamadi, Mohamed Boussouis, and Naima Amar Touhami, “Modeling the Drain Current of a PHEMT using the Artificial Neural Networks and a Taylor Series Expansion,” International Journal of Innovation and Applied Studies, vol. 10, no. 1, pp. 132–137, January 2015.
