Volume 37, Issue 3, October 2022, Pages 450–460
Idrissa Gaye1, Stéphane Yanhdet2, Doudou Gaye3, Abdourahmane Diallo4, Adam Sayoudi Bouzou5, and Mamadou Wade6
1 UFR-Sciences and Technologies, Iba Der Thiam University of Thiès, Senegal
2 Electromechanical Engineering Department, Polytechnic School of Thiès, Senegal
3 Electromechanical Engineering Department, Polytechnic Institute of Saint-Louis, Senegal
4 UFR-Sciences and Technologies, Iba Der Thiam University of Thiès, Senegal
5 Electromechanical Engineering Department, Polytechnic School of Thiès, Senegal
6 Laboratoire des Sciences et Techniques de l’Eau et de l’Environnement (LaSTEE), Ecole Polytechnique de Thiès BPA 10 Thiès, Senegal
Original language: English
Copyright © 2022 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
This paper presents the SRIM simulation investigation of energetic particles (electrons, protons, heavy ions…) irradiation. Heavy Ions used are: 36Ar, 78Kr, 136Xe and 238U. The electronic and nuclear energy losses of the incident ions and their course in the target material of silicon was calculated. We studied the stopping power or LET (Linear Energy Transfer), it makes possible to evaluate the actual path and the penetration profiles of the incident ion in the silicon target.
Author Keywords: SRIM, electronic energy loss, nuclear energy loss, Linear Energy Transfer (LET).
Idrissa Gaye1, Stéphane Yanhdet2, Doudou Gaye3, Abdourahmane Diallo4, Adam Sayoudi Bouzou5, and Mamadou Wade6
1 UFR-Sciences and Technologies, Iba Der Thiam University of Thiès, Senegal
2 Electromechanical Engineering Department, Polytechnic School of Thiès, Senegal
3 Electromechanical Engineering Department, Polytechnic Institute of Saint-Louis, Senegal
4 UFR-Sciences and Technologies, Iba Der Thiam University of Thiès, Senegal
5 Electromechanical Engineering Department, Polytechnic School of Thiès, Senegal
6 Laboratoire des Sciences et Techniques de l’Eau et de l’Environnement (LaSTEE), Ecole Polytechnique de Thiès BPA 10 Thiès, Senegal
Original language: English
Copyright © 2022 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
This paper presents the SRIM simulation investigation of energetic particles (electrons, protons, heavy ions…) irradiation. Heavy Ions used are: 36Ar, 78Kr, 136Xe and 238U. The electronic and nuclear energy losses of the incident ions and their course in the target material of silicon was calculated. We studied the stopping power or LET (Linear Energy Transfer), it makes possible to evaluate the actual path and the penetration profiles of the incident ion in the silicon target.
Author Keywords: SRIM, electronic energy loss, nuclear energy loss, Linear Energy Transfer (LET).
How to Cite this Article
Idrissa Gaye, Stéphane Yanhdet, Doudou Gaye, Abdourahmane Diallo, Adam Sayoudi Bouzou, and Mamadou Wade, “SRIM simulation of the interaction of heavy ions 36Ar, 78Kr, 136Xe and 238U with silicon material,” International Journal of Innovation and Applied Studies, vol. 37, no. 3, pp. 450–460, October 2022.
