This paper presents the SRIM simulation investigation of energetic particles (electrons, protons, heavy ions…) irradiation. Heavy Ions used are: 36Ar, 78Kr, 136Xe and 238U. The electronic and nuclear energy losses of the incident ions and their course in the target material of silicon was calculated. We studied the stopping power or LET (Linear Energy Transfer), it makes possible to evaluate the actual path and the penetration profiles of the incident ion in the silicon target.