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International Journal of Innovation and Applied Studies
ISSN: 2028-9324     CODEN: IJIABO     OCLC Number: 828807274     ZDB-ID: 2703985-7
 
 
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Modelling the Influence of Low Energy Electrons Emitted from Pm-147 on the Performance of a Silicon PV Cell


Volume 36, Issue 1, April 2022, Pages 205–212

 Modelling the Influence of Low Energy Electrons Emitted from Pm-147 on the Performance of a Silicon PV Cell

G. S. Tchouadep1, E. K. Tchédré2, I. Sourabié3, Issa Zerbo4, and Martial Zoungrana5

1 Laboratoire d’Energie Thermique Renouvelable (L.E.T.RE). Université Joseph KI ZERBO, Ouagadougou, Burkina Faso
2 Laboratoire d’Energie Thermique Renouvelable (L.E.T.RE). Université Joseph KI ZERBO, Ouagadougou, Burkina Faso
3 Laboratoire de Recherche en Énergétique et Météorologie de l'espace (LAREME), Université Norbert ZONGO, Koudougou, Burkina Faso
4 Laboratoire d’Energies Thermiques REnouvelables (L.E.T.RE), Ecole Doctorale Sciences et Technologies, Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso
5 Laboratoire d’Energies Thermiques REnouvelables (L.E.T.RE), Ecole Doctorale Sciences et Technologies, Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso

Original language: English

Copyright © 2022 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract


This paper investigated, using 1-D analysis, the effect of low energy electrons emitted from Promethium – 147 (Pm-147) on the performance of a silicon PV cell. The Pm-147 source is chosen due to the penetration depth of beta particles with the average kinetic energy of 62.5 KeV emitted from Pm-147, because at this depth the are able to generate charge carriers right down to the base. The continuity equation of excess minority carrier is solved respectively in the emitter for excess holes and in the base for excess electrons. The analytical expression of the density of electrons and holes for each part of the solar cell is derived and, in turn, the electrical parameters (Jsc, Voc, FF, η) of the PV cell are found. The influence of radiation flux on short-circuit current density (Jsc), Open circuit voltage (Voc), fill factor (FF) and conversion efficiency (η) are discussed. if we vary the flux of incident particles up to the value of 3.1010 cm-2, we achieve a relative increase in the PV Cell conversion efficiency of the order of 0.2743 %.

Author Keywords: Silicon solar cell, Beta electron, efficiency improvement, low energy electrons, Pm-147 source.


How to Cite this Article


G. S. Tchouadep, E. K. Tchédré, I. Sourabié, Issa Zerbo, and Martial Zoungrana, “Modelling the Influence of Low Energy Electrons Emitted from Pm-147 on the Performance of a Silicon PV Cell,” International Journal of Innovation and Applied Studies, vol. 36, no. 1, pp. 205–212, April 2022.